Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J, Zhang W, Speck F, Ostler M, Ley L, Seyller T
Zeitschrift: Journal of Physics D-Applied Physics
Verlag: Institute of Physics: Hybrid Open Access
Jahr der Veröffentlichung: 2010
Band: 43
Seitenbereich: 345303
ISSN: 0022-3727


Abstract


A solution gated field effect transistor has been fabricated on epitaxial single-layer graphene on 6H-SiC(0 0 0 1). Output and transfer characteristics were systematically studied as a function of electrolyte pH. The transfer characteristics of the device show a pH dependent shift of 19 ± 1 mV/pH. From the minimum sheet conductivity observed, an average charge carrier mobility of 1800 ± 100 cm 2 V -1 s -1 at room temperature has been inferred. It turns out that the Fermi level in the graphene layer is strongly pinned in the vicinity of the Dirac point. The analysis of the transfer characteristics is consistent with a concentration of 4 × 10 14 cm -2 interface states at 0.1 eV below the Dirac energy that is presumably associated with the (6√3 × 6√3)R30°-reconstruction at the interface between SiC(0 0 0 1) and graphene. © 2010 IOP Publishing Ltd.



FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ostler, Markus
Lehrstuhl für Laserphysik
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik
Speck, Florian
Naturwissenschaftliche Fakultät


Zitierweisen

APA:
Ristein, J., Zhang, W., Speck, F., Ostler, M., Ley, L., & Seyller, T. (2010). Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 43, 345303. https://dx.doi.org/10.1088/0022-3727/43/34/345303

MLA:
Ristein, Jürgen, et al. "Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide." Journal of Physics D-Applied Physics 43 (2010): 345303.

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Zuletzt aktualisiert 2018-07-08 um 03:38