Unoccupied dimer-bond state at Si(001) surfaces
Fauster T, Tanaka S, Tanimura K (2011)
Publication Status: Published
Publication Type: Journal article
Publication year: 2011
Journal
Publisher: American Physical Society
Book Volume: 84
Article Number: 235444
DOI: 10.1103/PhysRevB.84.235444
Abstract
Two-photon photoemission is used to identify the unoccupied dimer-bond state on the Si(001) surface at an energy 2.83 eV above the valence-band maximum. A strong resonance enhancement is found for excitation from the occupied dangling-bond state. The azimuthal and polarization dependence proves the orientation of the observed state along the dimer axis. The dispersion is dominated by the occupied initial state described by -0.50 free-electron masses in one- and two-photon photoemission.
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APA:
Fauster, T., Tanaka, S., & Tanimura, K. (2011). Unoccupied dimer-bond state at Si(001) surfaces. Physical Review B, 84. https://dx.doi.org/10.1103/PhysRevB.84.235444
MLA:
Fauster, Thomas, Shinichiro Tanaka, and Katsumi Tanimura. "Unoccupied dimer-bond state at Si(001) surfaces." Physical Review B 84 (2011).
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