Loss analysis on CIGS-modules by using contactless, imaging illuminated lock-in thermography and 2D electrical simulations

Fecher F, Adams J, Vetter A, Buerhop-Lutz C, Brabec C (2014)


Publication Language: English

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2014

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 3331-3334

Article Number: 6925648

Conference Proceedings Title: 40th IEEE Photovoltaic Specialist Conference

Event location: Colorado US

ISBN: 9781479943982

DOI: 10.1109/PVSC.2014.6925648

Abstract

Loss analysis on CIGS-modules are demonstrated by using contactless, imaging illuminated lock-in thermography (ILIT). Power dissipating defects, like shunts, were visualized in commercially manufactured test modules (30 × 30 cm). The evaluations of the ILIT-measurements displayed a correlations with the loss in maximum output power and in open circuit voltage. 2D finite element simulations of the shunts confirmed the correlations. A further simulative parameter study gives a deep understanding of the influence of a shunt on the electrical performance in thin film modules. As ILIT is a contactless and fast method, it has the potential to become a powerful tool for in-line characterization. Furthermore, we consider this technique to be applicable also to other thin film module technologies, like CdTe, a-Si:H or organic photovoltaics.

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APA:

Fecher, F., Adams, J., Vetter, A., Buerhop-Lutz, C., & Brabec, C. (2014). Loss analysis on CIGS-modules by using contactless, imaging illuminated lock-in thermography and 2D electrical simulations. In 40th IEEE Photovoltaic Specialist Conference (pp. 3331-3334). Colorado, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Fecher, Frank, et al. "Loss analysis on CIGS-modules by using contactless, imaging illuminated lock-in thermography and 2D electrical simulations." Proceedings of the 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Colorado Institute of Electrical and Electronics Engineers Inc., 2014. 3331-3334.

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