Graphene layers on silicon carbide studied by Raman spectroscopy

Röhrl J, Hundhausen M, Emtsev K, Seyller T, Ley L (2008)

Publication Type: Journal article

Publication year: 2008

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 600-603

Pages Range: 567

DOI: 10.4028/www.scientific.net/MSF.600-603.567

Authors with CRIS profile

Martin Hundhausen Lehrstuhl für Laserphysik Thomas Seyller Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Röhrl, J., Hundhausen, M., Emtsev, K., Seyller, T., & Ley, L. (2008). Graphene layers on silicon carbide studied by Raman spectroscopy. Materials Science Forum, 600-603, 567. https://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.567

MLA:

Röhrl, Jonas, et al. "Graphene layers on silicon carbide studied by Raman spectroscopy." Materials Science Forum 600-603 (2008): 567.

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