Characterization of defects in silicon carbide by Raman spectroscopy

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Details zur Publikation

Autorinnen und Autoren: Hundhausen M, Püsche R, Röhrl J, Ley L
Zeitschrift: physica status solidi (b)
Verlag: Wiley-VCH Verlag
Jahr der Veröffentlichung: 2008
Band: 254
Seitenbereich: 1356
ISSN: 0370-1972
eISSN: 1521-3951


We demonstrate the application of Raman spectroscopy as an optical non-contact method for the characterization of silicon carbide (SiC). The Raman spectra provide information about the polytype and thus can give direct information about microscopic inclusions of hexagonal polytypes in 3C-SiC grown by chemical vapor deposition (CVD) after annealing at elevated temperatures. Polytype conversion sets in at a about 1700°C and at higher temperatures eventually results in larger domains of 6H-SiC where twin boundaries act as barriers against a complete polytype conversion. We study shallow donor states of phosphorus- and nitrogen-doped SiC using low temperature electronic Raman spectroscopy. The various low frequency transitions observed in nitrogen doped SiC are assigned to the valley-orbit transitions of electrons in the 1s-ground states of donors that occupy inequivalent lattice sites. During vacuum annealing at elevated temperature graphitization of the SiC surface occurs. Raman spectroscopy is used to verify that under well controlled conditions a monoatomic graphene layer exists. We observe a phonon hardening of that layer compared to free standing graphene that we ascribe mainly to strain induced by different thermal expansion coefficients of graphite and SiC. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät


Hundhausen, M., Püsche, R., Röhrl, J., & Ley, L. (2008). Characterization of defects in silicon carbide by Raman spectroscopy. physica status solidi (b), 254, 1356.

Hundhausen, Martin, et al. "Characterization of defects in silicon carbide by Raman spectroscopy." physica status solidi (b) 254 (2008): 1356.


Zuletzt aktualisiert 2019-06-08 um 09:03