In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

Kolesnik-Gray M, Sorger C, Biswas S, Holmes JD, Weber HB, Krstic V (2015)

Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2015

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 106

Article Number: 233109

URI: http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527

DOI: 10.1063/1.4922527

Abstract

We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

Authors with CRIS profile

Maria Kolesnik-Gray Chair of Applied Physics Christian Sorger Chair of Applied Physics Heiko Weber Chair of Applied Physics Vojislav Krstic Professur für Angewandte Physik

Involved external institutions

University College Cork (UCC)

Ireland (IE)

How to cite

APA:

Kolesnik-Gray, M., Sorger, C., Biswas, S., Holmes, J.D., Weber, H.B., & Krstic, V. (2015). In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106. https://doi.org/10.1063/1.4922527

MLA:

Kolesnik-Gray, Maria, et al. "In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices." Applied Physics Letters 106 (2015).

BibTeX: Download