Ristein J, Ley L (2005)
Publication Type: Journal article
Publication year: 2005
Publisher: Elsevier
Book Volume: 14
Pages Range: 451
DOI: 10.1016/j.diamond.2004.12.051
Fifteen years after Landstrass and Ravi [1] [I.M. Landstrass, K.V. Ravi, App. Phys. Lett, 55 (1989) 975] reported a hydrogen induced surface conductivity of diamond, it has now been established that the phenomenon is based on a sub-surface hole accumulation layer. A quantitative model for the origin of this layer has been proposed by our group earlier and is based on the charge exchange between the diamond surface and solvated ions in a water layer that forms spontaneously on all surfaces in air. The process relies on the particularly low ionization energy of the hydrogenated diamond surface [2] [F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Phys. Rev. Lett. 85 (2000) 3472]. Here, we report on fullerenes (C
APA:
Ristein, J., & Ley, L. (2005). Surface transfer doping of diamond by fullerene. Diamond and Related Materials, 14, 451. https://doi.org/10.1016/j.diamond.2004.12.051
MLA:
Ristein, Jürgen, and Lothar Ley. "Surface transfer doping of diamond by fullerene." Diamond and Related Materials 14 (2005): 451.
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