36 % Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

Rimmelspacher J, Weigel R, Hagelauer AM, Issakov V (2017)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Original article

Future Publication Type: Conference contribution

Publication year: 2017

Pages Range: 1356-1358

Conference Proceedings Title: IEEE MTT-S International Microwave Symposium 2017

Event location: Honolulu, HI US

DOI: 10.1109/MWSYM.2017.8058865

Abstract

This paper presents a millimeter-wave (mm-wave) push-push voltage-controlled oscillator (VCO) in a 45 nm RFSOI CMOS technology. The circuit aims to meet specifications for FMCW radar applications requiring an ultra-wide PLL modulation bandwidth. The fundamental output of the VCO can be tuned from 27 GHz to 39 GHz, which corresponds to frequency tuning range (FTR) of 36 %. We extract the 2nd harmonic in a non-invasive way using a transformer. The measured phase noise (PN) at 1 MHz offset from the fundamental carrier varies across the tuning range from -100 dBc/Hz to -90 dBc/Hz. The VCO including output buffers dissipates 65 mW DC power from a single 1 V supply and consumes a chip area of 0.12 mm2.

Authors with CRIS profile

Johannes Rimmelspacher Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Amelie Marietta Hagelauer Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Rimmelspacher, J., Weigel, R., Hagelauer, A.M., & Issakov, V. (2017). 36 % Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. In IEEE MTT-S International Microwave Symposium 2017 (pp. 1356-1358). Honolulu, HI, US.

MLA:

Rimmelspacher, Johannes, et al. "36 % Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology." Proceedings of the International Microwave Symposium 2017, Honolulu, HI 2017. 1356-1358.

BibTeX: Download