Electron affinity and band bending of the single crystal diamond (111) surface

Journal article


Publication Details

Author(s): Ristein J, Ley L
Journal: Diamond and Related Materials
Publisher: Elsevier
Publication year: 1999
Volume: 8
Pages range: 792
ISSN: 0925-9635


Abstract

The electron affinity and band bending of a single crystal diamond (111) surface have been investigated as a function of hydrogen coverage via work function measurements, photoelectron yield spectroscopy, X-ray-excited photoelectron spectroscopy (XPS), and low-energy electron diffraction (LEED). The hydrogen desorption and the 1×1-2×1 surface phase transition were achieved by electron-beam irradiation at room temperature as well as annealing at high temperature. The electron affinity ranges from -1.27 eV for the fully hydrogen-covered 1×1 surface to 0.38 eV for the hydrogen-free 2×1 reconstructed surface. Electron beam irradiation is demonstrated to be an effective method to induce hydrogen desorption and surface reconstruction. However, this irradiation process does not change the surface band bending on type IIb diamond, which is generally increased by annealing. It is concluded that the electron-affinity change is caused by the C-H dipole layer, whereas the band bending is not directly related to hydrogen coverage or reconstruction but rather due to charged surface defects that are created simultaneously with the thermal treatment.


FAU Authors / FAU Editors

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Last updated on 2018-09-08 at 05:38