Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J, Ley L
Zeitschrift: Physical Review Letters
Verlag: American Physical Society
Jahr der Veröffentlichung: 1997
Band: 78
Heftnummer: 9
Seitenbereich: 1803-1806
ISSN: 0031-9007


Abstract

Novel photoelectron yield experiments performed with a dynamical range of 8 orders of magnitude reveal a new excitation channel for electron emission on diamond (100) and (111) surfaces with negative electron affinity which is due to defect states 2.0 and 4.1 eV below the conduction hand minimum. Analyzing the competition of free conduction band electrons excited out of defects and excitons with respect to final photoelectron production we determine that the electron diffusion length in p-type IIb diamond is between 150 and 250 μm.


FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 05:09