Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Bergmann C, Gröschel A, Will J, Magerl A
Zeitschrift: Journal of Applied Physics
Verlag: AMER INST PHYSICS
Jahr der Veröffentlichung: 2015
Band: 118
Heftnummer: 1
ISSN: 0021-8979


Abstract


Oxygen precipitation in highly boron-doped Czochralski silicon (5m Omega cm resistivity) was studied, and a strain-relieving mechanism involving the emission of silicon interstitial atoms (I-Si) was identified. Strain-sensitive X-ray diffraction was employed, and through a comparison with complementary electron microscopy measurements a linear misfit strain epsilon=0. 01 was determined. Different behavior concerning strain relaxation was measured for wafer-type samples (760 mu m thickness) and thick samples (2mm thickness), which was explained with out-diffusion of ISi in the thinner samples. Based on the experimental findings, a model was developed which invokes an increase in the solubility of interstitial silicon atoms upon boron doping. The model successfully accounts for different effects of boron doping on oxygen precipitation in silicon, which were reported on in literature such as preferential octahedral morphology of precipitates, enhanced nucleation, and relaxed accommodation of the precipitates with respect to the silicon lattice. (C) 2015 AIP Publishing LLC.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Bergmann, Christoph
Lehrstuhl für Kristallographie und Strukturphysik
Gröschel, Alexander
Lehrstuhl für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


Zitierweisen

APA:
Bergmann, C., Gröschel, A., Will, J., & Magerl, A. (2015). Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation. Journal of Applied Physics, 118(1). https://dx.doi.org/10.1063/1.4926429

MLA:
Bergmann, Christoph, et al. "Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation." Journal of Applied Physics 118.1 (2015).

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Zuletzt aktualisiert 2018-11-08 um 00:44