Surface Fermi level position of hydrogen passivated Si (111) surfaces

Journal article


Publication Details

Author(s): Ristein J, Ley L
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 1996
Volume: 68
Pages range: 1247
ISSN: 0003-6951


Abstract

Core and valence band photoemission data of hydrogen passivated Si(111):H surfaces yield surface Fermi level positions that are indicative of a near-surface depletion layer for n- as well as p-type samples. The bulk Fermi level positions are attained after annealing at ∼400°C. These observations are explained in terms of a hydrogen induced passivation of donors and acceptors in a surface layer of the order of a μm as a result of the wet-chemical etching procedure. © 1996 American Institute of Physics.


FAU Authors / FAU Editors

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Last updated on 2018-09-08 at 05:08