Implantation and Annealing of Aluminum in 4H Silicon Carbide

Rambach M, Schmid F, Krieger M, Frey L, Bauer A, Pensl G, Ryssel H (2005)

Publication Type: Journal article

Publication year: 2005

Journal

Book Volume: 237

Pages Range: 68-71

DOI: 10.1016/j.nimb.2005.04.079

Abstract

Aluminum ions with a dose between 1.2 × 10¹⁴ cm ^-2 and 1.2 × 10¹⁵ cm^-2 were implanted into 4H silicon carbide at room temperature, 650 °C, and 800 °C. High temperature furnace and lamp annealing of the implanted samples were investigated with respect to sheet resistance, hole mobility and free hole concentration. For an aluminum dose of 1.2 × 10¹⁵ cm ^-2 implanted at room temperature and subsequent furnace annealing at 1700 °C for 30 min, a sheet resistance of about 34 kΩ/□ and for lamp annealing at 1770 °C for 5 min, a slight increased sheet resistance of 38 kΩ/□ was obtained. Increasing implantation temperature to 800 °C and postimplantation furnace annealing resulted in a decreased sheet resistance of 18 kΩ/□. © 2005 Elsevier B.V. All rights reserved.

Authors with CRIS profile

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) Germany (DE)

How to cite

APA:

Rambach, M., Schmid, F., Krieger, M., Frey, L., Bauer, A., Pensl, G., & Ryssel, H. (2005). Implantation and Annealing of Aluminum in 4H Silicon Carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 237, 68-71. https://dx.doi.org/10.1016/j.nimb.2005.04.079

MLA:

Rambach, Martin, et al. "Implantation and Annealing of Aluminum in 4H Silicon Carbide." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005): 68-71.

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