Moving Grating Technique: A New Method for the Determination of Electron and Hole Mobilities and their Lifetime

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Applied Physics Letters
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 1993
Band: 63
Seitenbereich: 3066
ISSN: 0003-6951


Abstract

A new technique to determine the mobilities and lifetime of photogenerated electrons and holes in semiconductors relies on the short circuit current that is induced perpendicularly to a moving interference grating. Theoretical expressions for the short circuit current are derived that relate the carrier mobilities and their lifetime to the velocity and spatial period of the grating. The technique has been implemented and was successfully applied to a-Si:H.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-09-08 um 04:53