Light-induced transient changes of the occupied density of defect states of a-Si:H

Journal article


Publication Details

Author(s): Ristein J, Ley L
Journal: Journal of Non-Crystalline Solids
Publisher: Elsevier
Publication year: 1993
Volume: 164-166
Pages range: 195
ISSN: 0022-3093


Abstract

We have investigated transient changes of the defect density of states upon laser illumination using Photoelectron Yield Spectroscopy. The spectra show an increase of the occupied defect density of states (ODOS) upon illumination between EF and EF-0.75 eV and a decrease in the region of deep tail states. The signal depends sub-linearly on the laser intensity and reaches ΔODOS ≈ 1017 cm-3 eV-1 at an intensity of 50 mW cm-2, the highest intensity used. Time resolved measurements reveal fast rise and slow decay times. We interpret the observed effect either as a signature of weak bond-dangling bond conversion or as an energy relaxation of defects. © 1993.


FAU Authors / FAU Editors

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Last updated on 2018-09-08 at 04:53