Light-induced transient changes of the occupied density of defect states of a-Si:H

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J, Ley L
Zeitschrift: Journal of Non-Crystalline Solids
Verlag: Elsevier
Jahr der Veröffentlichung: 1993
Band: 164-166
Seitenbereich: 195
ISSN: 0022-3093


Abstract

We have investigated transient changes of the defect density of states upon laser illumination using Photoelectron Yield Spectroscopy. The spectra show an increase of the occupied defect density of states (ODOS) upon illumination between EF and EF-0.75 eV and a decrease in the region of deep tail states. The signal depends sub-linearly on the laser intensity and reaches ΔODOS ≈ 1017 cm-3 eV-1 at an intensity of 50 mW cm-2, the highest intensity used. Time resolved measurements reveal fast rise and slow decay times. We interpret the observed effect either as a signature of weak bond-dangling bond conversion or as an energy relaxation of defects. © 1993.


FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 04:53