Light-induced transient changes of the occupied density of defect states of a-Si:H

Ristein J, Ley L (1993)

Publication Type: Journal article

Publication year: 1993

Journal

Journal of Non-Crystalline Solids Elsevier

Publisher: Elsevier

Book Volume: 164-166

Pages Range: 195

DOI: 10.1016/0022-3093(93)90524-2

Abstract

We have investigated transient changes of the defect density of states upon laser illumination using Photoelectron Yield Spectroscopy. The spectra show an increase of the occupied defect density of states (ODOS) upon illumination between EF and EF-0.75 eV and a decrease in the region of deep tail states. The signal depends sub-linearly on the laser intensity and reaches ΔODOS ≈ 10¹⁷ cm^-3 eV^-1 at an intensity of 50 mW cm^-2, the highest intensity used. Time resolved measurements reveal fast rise and slow decay times. We interpret the observed effect either as a signature of weak bond-dangling bond conversion or as an energy relaxation of defects. © 1993.

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Ristein, J., & Ley, L. (1993). Light-induced transient changes of the occupied density of defect states of a-Si:H. Journal of Non-Crystalline Solids, 164-166, 195. https://dx.doi.org/10.1016/0022-3093(93)90524-2

MLA:

Ristein, Jürgen, and Lothar Ley. "Light-induced transient changes of the occupied density of defect states of a-Si:H." Journal of Non-Crystalline Solids 164-166 (1993): 195.

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