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In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy

Ristein J, Ley L (1993)

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Publication Type: Journal article

Publication year: 1993

Journal

Publisher: Elsevier

Book Volume: 164-166

Pages Range: 123

DOI: 10.1016/0022-3093(93)90507-T

Abstract

The effect of chemical annealing with atomic hydrogen on a-Si:H samples was investigated in situ using surface sensitive spectroscopies. Changes in the hydrogen concentration and configuration as well as in the near surface defect state density are observed and are compared to the corresponding changes with deposition temperature. © 1993.

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How to cite

APA:

Ristein, J., & Ley, L. (1993). In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy. Journal of Non-Crystalline Solids, 164-166, 123. https://dx.doi.org/10.1016/0022-3093(93)90507-T

MLA:

Ristein, Jürgen, and Lothar Ley. "In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy." Journal of Non-Crystalline Solids 164-166 (1993): 123.

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