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Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy

Ristein J, Ley L (1993)

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Publication Type: Journal article

Publication year: 1993

Journal

Publisher: Elsevier

Book Volume: 164-166

Pages Range: 1123

DOI: 10.1016/0022-3093(93)91196-A

Abstract

Amorphous hydrogenated carbon films were prepared by RF-PECVD of CH4 with the self bias varying from 0 to 200V. The films were analysed with x-ray and ultraviolet photoelectron spectroscopy as well as photoelectron yield spectroscopy. The densities as derived from the plasmon energies increase from 1.2 to 1.7 g/cm³ with bias voltage and the sp²/(sp³+sp²) ratio extracted from an analysis of the valence band spectra increases from 15 to 35% over the same range. Two defect bands were identified in the pseudogap, 1.4 eV and 2.4 eV above the π-bonding states with integrated densities that increase from 1·10²⁰ to 7·10²⁰ cm^-3 with bias. © 1993.

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How to cite

APA:

Ristein, J., & Ley, L. (1993). Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy. Journal of Non-Crystalline Solids, 164-166, 1123. https://dx.doi.org/10.1016/0022-3093(93)91196-A

MLA:

Ristein, Jürgen, and Lothar Ley. "Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy." Journal of Non-Crystalline Solids 164-166 (1993): 1123.

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