Home Publications Research Grants Inventions & Patents Awards Additional Research Activities Faculties & Institutions Research Areas

Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation

Martinez Limia A, Pichler P, Steen C, Paul S, Lerch W (2008)

---

Publication Type: Conference contribution

Publication year: 2008

Journal

Publisher: Trans Tech Publications Ltd

Edited Volumes: Solid State Phenomena

Series: Solid-State Phenomena

Book Volume: 131 - 133

Pages Range: 277

Conference Proceedings Title: Gettering and Defect Engineering in Semiconductor Technology XII

Event location: Italien

ISBN: 3-908451-43-4

DOI: 10.4028/www.scientific.net/SSP.131-133.277

Authors with CRIS profile

How to cite

APA:

Martinez Limia, A., Pichler, P., Steen, C., Paul, S., & Lerch, W. (2008). Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation. In Gettering and Defect Engineering in Semiconductor Technology XII (pp. 277). Italien: Trans Tech Publications Ltd.

MLA:

Martinez Limia, Alberto, et al. "Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation." Proceedings of the Gettering and Defect Engineering in Semiconductor Technology XII, Italien Trans Tech Publications Ltd, 2008. 277.

BibTeX: Download