Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H
Beitrag in einer Fachzeitschrift
Details zur Publikation
Autor(en): Ristein J
Zeitschrift: → Journal of Non-Crystalline Solids |
Verlag: Elsevier
Jahr der Veröffentlichung: 1991
Band: 137&138
Seitenbereich: 563
ISSN: 0022-3093
Abstract
On the basis of seperately existing theories the combined influence of geminate, non geminate and defect recombination on the low temperature photoinduced properties of a-Si:H is discussed. © 1991 Elsevier Science Publishers B.V. All rights reserved.
FAU-Autoren / FAU-Herausgeber
| Ristein, Jürgen apl. Prof. Dr. |
| | Lehrstuhl für Laserphysik |
|
Zitierweisen
APA: | Ristein, J. (1991). Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H. Journal of Non-Crystalline Solids, 137&138, 563. https://dx.doi.org/10.1016/S0022-3093(05)80180-2 |
MLA: | Ristein, Jürgen. "Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H." Journal of Non-Crystalline Solids 137&138 (1991): 563. |