Thermally stimulated Conductivity in a-Si:H Doping superlattices

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Details zur Publikation

Autor(en): Hundhausen M
Zeitschrift: Journal of Non-Crystalline Solids
Verlag: Elsevier
Jahr der Veröffentlichung: 1989
Band: 114
Seitenbereich: 720
ISSN: 0022-3093


Hydrogenated amorphous silicon doping superlattices are utilized to obtain a high metastable concentration of spatially separated electrons and holes trapped in their respective band tails. Thermally stimulated conductivity (TSC) experiments show that the thermal energy required to excite carriers to the transport path decreases with increasing concentration of metastable carriers (Nmeta). This is in contrast to IR-photoconductivity data which show a fixed threshold for the excitation of band tail carriers to the mobility edge which does not depend on Nmeta. A model is proposed in which the differences between thermal and optical excitation energies are due to potential fluctuations created by the trapped carriers themselves. © 1989.

FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik


Hundhausen, M. (1989). Thermally stimulated Conductivity in a-Si:H Doping superlattices. Journal of Non-Crystalline Solids, 114, 720.

Hundhausen, Martin. "Thermally stimulated Conductivity in a-Si:H Doping superlattices." Journal of Non-Crystalline Solids 114 (1989): 720.


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