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Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance

Ristein J (1989)

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Publication Type: Journal article

Publication year: 1989

Journal

Publisher: Elsevier

Book Volume: 114

Pages Range: 444

DOI: 10.1016/0022-3093(89)90612-1

Abstract

Defect spectroscopy with IR light of 1.17 eV photon energy surprisingly contradicts the commonly accepted assumption that singly occupied dangling bond states, D⁰, comprise the dominant deep defects in undoped a-Si:H films. Instead, evidence for a large concentration of diamagnetic states in dark equilibrium is found. They are at least three times more than the D⁰ states seen by dark ESR. D^- states, possibly associated with the quartz interface of the films, are likely candidates for these defect states. © 1989.

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How to cite

APA:

Ristein, J. (1989). Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance. Journal of Non-Crystalline Solids, 114, 444. https://doi.org/10.1016/0022-3093(89)90612-1

MLA:

Ristein, Jürgen. "Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance." Journal of Non-Crystalline Solids 114 (1989): 444.

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