Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J
Zeitschrift: Journal of Non-Crystalline Solids
Verlag: Elsevier
Jahr der Veröffentlichung: 1989
Band: 114
Seitenbereich: 444
ISSN: 0022-3093


Abstract

Defect spectroscopy with IR light of 1.17 eV photon energy surprisingly contradicts the commonly accepted assumption that singly occupied dangling bond states, D0, comprise the dominant deep defects in undoped a-Si:H films. Instead, evidence for a large concentration of diamagnetic states in dark equilibrium is found. They are at least three times more than the D0 states seen by dark ESR. D- states, possibly associated with the quartz interface of the films, are likely candidates for these defect states. © 1989.


FAU-Autoren / FAU-Herausgeber

Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 04:38