Optical mapping of aluminum doped p-type SiC wafers

Wellmann P, Straubinger T, Künecke U, Müller R, Sakwe A, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L, Camassel J (2005)


Publication Status: Published

Publication Type: Journal article

Publication year: 2005

Journal

Publisher: John Wiley & Sons, Ltd / Academic Verlag GMBH

Book Volume: 202

Pages Range: 598-601

Journal Issue: 4

DOI: 10.1002/PSSA.200460436

Abstract

We discuss the application of optical techniques to address the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers; optical techniques are superior over their electrical counterparts in a sense that they are non-destructive. While absorption and birefringence mapping are powerful tools to determine the homogeneity of charge carrier concentration and defects in n-type SiC, respectively, the same methods fail in highly p-type doped SiC due to the opaque nature of the latter. Therefore reflective methods like Raman spectroscopy and low temperature photoluminescence have to be applied in order to address electronic properties by optical techniques. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.

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APA:

Wellmann, P., Straubinger, T., Künecke, U., Müller, R., Sakwe, A., Pons, M.,... Camassel, J. (2005). Optical mapping of aluminum doped p-type SiC wafers. physica status solidi (a), 202(4), 598-601. https://dx.doi.org/10.1002/PSSA.200460436

MLA:

Wellmann, Peter, et al. "Optical mapping of aluminum doped p-type SiC wafers." physica status solidi (a) 202.4 (2005): 598-601.

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