Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Hock R, Konias K, Perdicaro LMS, Magerl A, Hens P, Wellmann P
Zeitschrift: Materials Science Forum
Jahr der Veröffentlichung: 2010
Band: 645-648
Seitenbereich: 29-32
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


Abstract


We have investigated thermally induced strain in the SiC crystal lattice during physical vapor transport bulk growth. Using high energy x-ray diffraction lattice plane bending was observed in-situ during growth. With increasing growth rate increasing lattice plane bending and, hence, strain was observed. A comparison with numerical modeling of the growth process shows that the latter is related to the heat of crystallization which needs to be dissipated from the crystal growth front. The related temperature gradient as driving force for the dissipation of the heat of crystallization causes lattice plane bending. Optimization of the growth process needs to consider such effects.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Hens, Philip
Graduiertenzentrum der FAU
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Konias, Katja
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Zitierweisen

APA:
Hock, R., Konias, K., Perdicaro, L.M.S., Magerl, A., Hens, P., & Wellmann, P. (2010). Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction. Materials Science Forum, 645-648, 29-32. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.29

MLA:
Hock, Rainer, et al. "Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction." Materials Science Forum 645-648 (2010): 29-32.

BibTeX: 

Zuletzt aktualisiert 2018-09-08 um 09:23