Fundamental Efficiency Limits in Power Electronic Systems

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Details zur Publikation

Autor(en): Heckel T, Rettner C, März M
Verlag: Institute of Electrical and Electronics Engineers Inc.
Jahr der Veröffentlichung: 2016
ISBN: 9781479965823


Abstract


In this paper, the efficiency limits of power electronic converters are investigated from a semiconductor point of view. The approach is presented on the example of a hard switching half bridge while taking Si, SiC and GaN devices into account. Beside parasitic effects of the semiconductors itself, further converter non-idealities and limits from a thermal point of view are discussed. All in all, the obtained results act as a design guideline and allow for an easy comparison of different semiconductor technologies.



FAU-Autoren / FAU-Herausgeber

Heckel, Thomas Dr.
Lehrstuhl für Elektronische Bauelemente
März, Martin Prof. Dr.
Technische Fakultät


Autor(en) der externen Einrichtung(en)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


Zitierweisen

APA:
Heckel, T., Rettner, C., & März, M. (2016). Fundamental Efficiency Limits in Power Electronic Systems. Institute of Electrical and Electronics Engineers Inc..

MLA:
Heckel, Thomas, Cornelius Rettner, and Martin März. "Fundamental Efficiency Limits in Power Electronic Systems." Proceedings of the 2015 IEEE International Telecommunications Energy Conference, INTELEC 2015 Institute of Electrical and Electronics Engineers Inc., 2016.

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Zuletzt aktualisiert 2018-22-11 um 13:50