Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs

Buch (Autor)
(Band aus einer Reihe)


Details zur Publikation

Autor(en): Kreutzer O, Heckel T, März M
Verlag: Trans Tech Publications Ltd
Jahr der Veröffentlichung: 2016
Band: 858
Seitenbereich: 880-884
ISBN: 9783035710427


Abstract


SiC-MOSFETs are available since several years, but unlike SiC diodes they have not arrived in the mass market yet. The main reason is that the higher costs do not get compensated by the technical advantages in common applications. This lack is not only caused by the SiCMOSFETs itself, but also by the packaging and the gate drivers. Consequently the main challenge for getting SiC-MOSFETs to a wider acceptance by application engineers is to show how all benefits of the new technology can be used. This paper demonstrates how SiC-MOSFETs can be operated in a standard half bridge application with exceptional switching speeds of less than 4 ns, resulting in slopes of more than 200 kV/μs and lowest possible switching losses. Previous publications have claimed to use “the full potential of the SiC devices for power conversion applications” achieving switching times of 20 ns [1].



FAU-Autoren / FAU-Herausgeber

Heckel, Thomas Dr.
Lehrstuhl für Elektronische Bauelemente
März, Martin Prof. Dr.
Technische Fakultät


Autor(en) der externen Einrichtung(en)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


Zitierweisen

APA:
Kreutzer, O., Heckel, T., & März, M. (2016). Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs. Trans Tech Publications Ltd.

MLA:
Kreutzer, Otto, Thomas Heckel, and Martin März. Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs. Trans Tech Publications Ltd, 2016.

BibTeX: 

Zuletzt aktualisiert 2018-12-11 um 20:50