Interface screening and imprint in poly(vinylidene fluoride/ trifluoroethylene) ferroelectric field effect transistors

Koval Y, Lazareva I, Müller P, Müller K, Schmeisser D (2009)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 105

Article Number: 054110

Journal Issue: 5

DOI: 10.1063/1.3088887

Abstract

We investigated the imprint effect in ferroelectric capacitors and field effect transistors (FETs) with a poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric insulator. The shift in switching voltages and the change in the ferroelectric FET (FeFET) channel conductance were measured as a function of time and the thickness of the ferroelectric layer. Analyzing our experimental data, we show that the imprint originates from interface-induced processes, which effectively screen polarization charges in P(VDF-TrFE). This phenomenon significantly influences the retention of FeFET channel conductance and the memory functionality of FeFET with P(VDF-TrFE). © 2009 American Institute of Physics.

Authors with CRIS profile

Yury Koval Lehrstuhl für Experimentalphysik Irina Lazareva Lehrstuhl für Experimentalphysik Paul Müller Lehrstuhl für Experimentalphysik

Involved external institutions

Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE)

How to cite

APA:

Koval, Y., Lazareva, I., Müller, P., Müller, K., & Schmeisser, D. (2009). Interface screening and imprint in poly(vinylidene fluoride/ trifluoroethylene) ferroelectric field effect transistors. Journal of Applied Physics, 105(5). https://dx.doi.org/10.1063/1.3088887

MLA:

Koval, Yury, et al. "Interface screening and imprint in poly(vinylidene fluoride/ trifluoroethylene) ferroelectric field effect transistors." Journal of Applied Physics 105.5 (2009).

BibTeX: Download