Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

Polster S, Jank M, Frey L (2016)

Publication Status: Published

Publication Type: Journal article

Publication year: 2016

Journal

Journal of Applied Physics AIP Publishing

Publisher: AMER INST PHYSICS

Book Volume: 119

Journal Issue: 2

DOI: 10.1063/1.4939289

Abstract

The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization. (C) 2016 AIP Publishing LLC.

Authors with CRIS profile

Michael Jank
Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Related research project(s)

GRK 1161: Disperse systems for electronic applications - subproject electron devices in a nano-crystalline matrix (GRK 1161) GRK 1161: Disperse Systeme für Elektronikanwendungen Oct. 1, 2005 - Sept. 30, 2014

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Polster, S., Jank, M., & Frey, L. (2016). Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles. Journal of Applied Physics, 119(2). https://doi.org/10.1063/1.4939289

MLA:

Polster, Sebastian, Michael Jank, and Lothar Frey. "Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles." Journal of Applied Physics 119.2 (2016).

BibTeX: Download