Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry

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Details zur Publikation

Autor(en): Hock R
Zeitschrift: Zeitschrift für Kristallographie
Verlag: R OLDENBOURG VERLAG
Jahr der Veröffentlichung: 2004
Band: 219
Heftnummer: 2
Seitenbereich: 81-87
ISSN: 0044-2968


Abstract


The eight-beam case of the Si-888 reflection in backscattering has been studied by scanning the eight simultaneously excited reflections Si 888, Si 088, Si 880, Si 808, Si 800, Si 080, Si 008 and Si 000 in wavelength and two independent rocking angles. Largely different widths of the individual reflection profiles found are explained from the Ewald representation as suggested by kinematic diffraction theory. The intensity profiles demonstrate a coupling of the eight simultaneously excited wave fields as expected from dynamic diffraction theory.



FAU-Autoren / FAU-Herausgeber

Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik

Zuletzt aktualisiert 2018-10-08 um 16:08