Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry

Hock R (2004)


Publication Status: Published

Publication Type: Journal article

Publication year: 2004

Journal

Publisher: R OLDENBOURG VERLAG

Book Volume: 219

Pages Range: 81-87

Journal Issue: 2

Abstract

The eight-beam case of the Si-888 reflection in backscattering has been studied by scanning the eight simultaneously excited reflections Si 888, Si 088, Si 880, Si 808, Si 800, Si 080, Si 008 and Si 000 in wavelength and two independent rocking angles. Largely different widths of the individual reflection profiles found are explained from the Ewald representation as suggested by kinematic diffraction theory. The intensity profiles demonstrate a coupling of the eight simultaneously excited wave fields as expected from dynamic diffraction theory.

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How to cite

APA:

Hock, R. (2004). Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry. Zeitschrift für Kristallographie, 219(2), 81-87.

MLA:

Hock, Rainer. "Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry." Zeitschrift für Kristallographie 219.2 (2004): 81-87.

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