Real-time investigations of selenization reactions in the system Cu-In-Al-Se

Hock R (2006)


Publication Status: Published

Publication Type: Journal article

Publication year: 2006

Journal

Publisher: WILEY-V C H VERLAG GMBH

Book Volume: 203

Pages Range: 2581-2587

Journal Issue: 11

DOI: 10.1002/pssa.200669558

Abstract

In this article we present results of a detailed study of selenization reactions in the quaternary system Cu-In-Al-Se and of the binary subsystem aluminum-selenium. The investigation of solid-state reactions involved in the formation of the compound semiconductor Cu(In,Al)Se-2 was performed using real-time X-ray diffraction (XRD) with a time resolution of 22.5 s while annealing an elemental layer stack of the metals covered with selenium. A temperature-resolved phase analysis shows that the formation of the semiconductor takes place via metal-selenides. Ex-situ XRD measurements of the processed thin films show a phase segregation concerning the aluminum content of the formed chalcopyrite. Subsequent Rietveld-refinement of real-time measurements reveals a formation reaction of the quaternary semiconductor Cu(In,AI)Se-2 from the gamma-In2Se3 related crystal structure of (Al,In)(2)Se-3 and Cu2Se as educts. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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How to cite

APA:

Hock, R. (2006). Real-time investigations of selenization reactions in the system Cu-In-Al-Se. physica status solidi (a), 203(11), 2581-2587. https://dx.doi.org/10.1002/pssa.200669558

MLA:

Hock, Rainer. "Real-time investigations of selenization reactions in the system Cu-In-Al-Se." physica status solidi (a) 203.11 (2006): 2581-2587.

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