Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy

Journal article


Publication Details

Author(s): Horbaschk M, Benkert A, Schumacher C, Brunner K, Neder R
Journal: Applied Physics Letters
Publisher: AMER INST PHYSICS
Publication year: 2009
Volume: 94
Journal issue: 21
ISSN: 0003-6951


Abstract


The temporal development of strain relaxation is monitored during and immediately after heteroepitaxy by x-ray diffraction with high resolution in strain and time. ZnSe layers on (001)GaAs with thicknesses just a little above the onset of plastic relaxation reveal inhomogeneous, partial relaxation which continues with a time constant of 50 s immediately after the stop of layer growth. A model of generation, glide, and blocking of dislocations well explains the observation that the degree of relaxation finally reached after growth stop is determined by the density of dislocations rapidly generated prior to it.



FAU Authors / FAU Editors

Neder, Reinhard Prof. Dr.
Professur für Allgemeine Mineralogie/Kristallographie


External institutions
Julius-Maximilians-Universität Würzburg


How to cite

APA:
Horbaschk, M., Benkert, A., Schumacher, C., Brunner, K., & Neder, R. (2009). Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy. Applied Physics Letters, 94(21). https://dx.doi.org/10.1063/1.3143630

MLA:
Horbaschk, M., et al. "Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy." Applied Physics Letters 94.21 (2009).

BibTeX: 

Last updated on 2018-06-08 at 20:38