Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy

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Details zur Publikation

Autorinnen und Autoren: Horbaschk M, Benkert A, Schumacher C, Brunner K, Neder R
Zeitschrift: Applied Physics Letters
Verlag: AMER INST PHYSICS
Jahr der Veröffentlichung: 2009
Band: 94
Heftnummer: 21
ISSN: 0003-6951


Abstract


The temporal development of strain relaxation is monitored during and immediately after heteroepitaxy by x-ray diffraction with high resolution in strain and time. ZnSe layers on (001)GaAs with thicknesses just a little above the onset of plastic relaxation reveal inhomogeneous, partial relaxation which continues with a time constant of 50 s immediately after the stop of layer growth. A model of generation, glide, and blocking of dislocations well explains the observation that the degree of relaxation finally reached after growth stop is determined by the density of dislocations rapidly generated prior to it.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Neder, Reinhard Prof. Dr.
Professur für Allgemeine Mineralogie/Kristallographie


Einrichtungen weiterer Autorinnen und Autoren

Julius-Maximilians-Universität Würzburg


Zitierweisen

APA:
Horbaschk, M., Benkert, A., Schumacher, C., Brunner, K., & Neder, R. (2009). Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy. Applied Physics Letters, 94(21). https://dx.doi.org/10.1063/1.3143630

MLA:
Horbaschk, M., et al. "Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy." Applied Physics Letters 94.21 (2009).

BibTeX: 

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