Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz

Issakov V, Rimmelspacher J, Werthof A, Hagelauer AM, Weigel R (2017)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Original article

Future Publication Type: Conference contribution

Publication year: 2017

Pages Range: 3

Conference Proceedings Title: IEEE MTT-S International Microwave Symposium 2017

Event location: Honolulu, Hawaii, USA US

DOI: 10.1109/MWSYM.2017.8058792

Abstract

Interferences injected to an RF circuit may strongly deteriorate the electrical performance. Parasitic coupling via substrate is one of the dominant interference transmission mechanisms in highly integrated systems. The effect of substrate coupling becomes more critical at higher circuit frequencies. This poses a particular challenge for highly integrated millimeterwave systems, since isolation techniques become less efficient with an increasing operating frequency. This paper presents an experimental study on coupling via bulk silicon and RFSOI substrates. We investigate in measurement up to 110 GHz efficiency of several isolation techniques, such as triple-well, p+ and n+ guard-rings and use of undoped highly resistive region. Additionally, RF-SOI substrates are known to be beneficial for higher crosstalk isolation. However, also this isolation degrades at higher frequencies. Hence, we investigate in measurement up to 110 GHz the isolation via low-resistivity and high-resistivity trap-rich SOI substrate variants. Test structures were realized in 40 nm bulk CMOS and 45 nm RF-SOI technology nodes.

Authors with CRIS profile

Johannes Rimmelspacher Lehrstuhl für Technische Elektronik Amelie Marietta Hagelauer Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Issakov, V., Rimmelspacher, J., Werthof, A., Hagelauer, A.M., & Weigel, R. (2017). Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz. In IEEE MTT-S International Microwave Symposium 2017 (pp. 3). Honolulu, Hawaii, USA, US.

MLA:

Issakov, Vadim, et al. "Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz." Proceedings of the International Microwave Symposium 2017, Honolulu, Hawaii, USA 2017. 3.

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