[cis-(1,3-diene) 2W(CO) 2] complexes as MOCVD precursors for the deposition of thin tungsten - Tungsten carbide films

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Details zur Publikation

Autor(en): Jipa I, Heinemann F, Schneider A, Popovska N, Siddiqi MA, Siddiqui RA, Atakan B, Marbach H, Papp C, Steinrück HP, Zenneck U
Zeitschrift: Chemical Vapor Deposition
Verlag: Wiley-VCH Verlag
Jahr der Veröffentlichung: 2010
Band: 16
Seitenbereich: 239-247
ISSN: 0948-1907


Abstract


Tungsten - tungsten carbide thin films are deposited by metal-organic (MO)CVD on silica-coated silicon wafers using [cis-(1,3-butadiene) W(CO) ] and [cis-(1,3-cyclohexadiene) W(CO) ], respectively, as tunable precursor complexes. The compounds are prepared through photochemical ligand exchange reactions from [W(CO) ] and fully characterized, including X-ray structure determination and detailed differential thermal analysis (DTA)/thermogravimetry (TG) investigations. Gas-phase diffusion coefficients and the vapor pressure of the compounds are calculated. The MOCVD experiments are performed in a vertical cold-wall reactor and the exhaust gas is analyzed by gas chromatography (GC). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) measurements are utilized for film characterization. Consequences of the high oxophilicity of freshly formed tungsten surfaces, consecutive surface reactions of the complex ligands, film growth, and film properties are discussed. Inside the layers, tungsten carbide is identified as the main component. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.



FAU-Autoren / FAU-Herausgeber

Heinemann, Frank Dr.
Lehrstuhl für Anorganische und Allgemeine Chemie
Marbach, Hubertus PD Dr.
Naturwissenschaftliche Fakultät
Papp, Christian PD Dr.
Lehrstuhl für Physikalische Chemie II
Popovska, Nadejda Prof. Dr.
Technische Fakultät
Steinrück, Hans-Peter Prof. Dr.
Lehrstuhl für Physikalische Chemie II
Zenneck, Ulrich Prof. Dr.
Naturwissenschaftliche Fakultät


Autor(en) der externen Einrichtung(en)
Universität Duisburg-Essen


Zitierweisen

APA:
Jipa, I., Heinemann, F., Schneider, A., Popovska, N., Siddiqi, M.A., Siddiqui, R.A.,... Zenneck, U. (2010). [cis-(1,3-diene) 2W(CO) 2] complexes as MOCVD precursors for the deposition of thin tungsten - Tungsten carbide films. Chemical Vapor Deposition, 16, 239-247. https://dx.doi.org/10.1002/cvde.201006852

MLA:
Jipa, Ilona, et al. "[cis-(1,3-diene) 2W(CO) 2] complexes as MOCVD precursors for the deposition of thin tungsten - Tungsten carbide films." Chemical Vapor Deposition 16 (2010): 239-247.

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