Söll C, Reichenbach M, Röber J, Hagelauer AM, Weigel R, Fey D (2018)
Publication Status: Published
Publication Type: Journal article, Original article
Future Publication Type: Journal article
Publication year: 2018
Publisher: Wiley Online Library
Book Volume: 46
Pages Range: 99-112
Journal Issue: 1
DOI: 10.1002/cta.2379
In this work, the benefits of memristor-based multilevel memories are described along with their design problems. Starting with measurements of discrete actual devices, a discrete memristor based multilevel memory is developed. It uses a printed circuit board in order to connect eight packaged memristors from Bio Inspired to test a ternary Arithmetic Logic Unit (ALU) on a field programmable gate array (FPGA). These circuits are then integrated in the second proposed memory system based on a 150nm CMOS process that can be equipped with memristors on top of the metal layers. This integrated solution includes proper read-out, erase and write circuits to control real memristors, and 32x32 memristive memory cells. It is compared to a common static random-access memory (SRAM) in terms of area, computation speed and power consumption showing benefits for memory sizes bigger than 70 words. Since yield and device variations are still a big issue in memristor fabrication, methods to counter these problems are also proposed in the end. An actual implementation should offer several trimming solutions to ensure proper functionality of a prototype memory as well as a power-on calibration, until these problems are solved. The development of the presented memories is not only based on different models but also measurements done with real devices.
APA:
Söll, C., Reichenbach, M., Röber, J., Hagelauer, A.M., Weigel, R., & Fey, D. (2018). Case Study on Memristor-Based Multilevel Memories. International Journal of Circuit Theory and Applications, 46(1), 99-112. https://dx.doi.org/10.1002/cta.2379
MLA:
Söll, Christopher, et al. "Case Study on Memristor-Based Multilevel Memories." International Journal of Circuit Theory and Applications 46.1 (2018): 99-112.
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