Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

Pecqueur S, Maltenberger A, Petrukhina M, Halik M, Jäger A, Pentlehner D, Schmid G (2016)


Publication Language: English

Publication Type: Journal article, Report

Publication year: 2016

Journal

Book Volume: 55

Pages Range: 10493-10497

Journal Issue: 35

DOI: 10.1002/anie.201601926

Authors with CRIS profile

Involved external institutions

How to cite

APA:

Pecqueur, S., Maltenberger, A., Petrukhina, M., Halik, M., Jäger, A., Pentlehner, D., & Schmid, G. (2016). Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications. Angewandte Chemie International Edition, 55(35), 10493-10497. https://doi.org/10.1002/anie.201601926

MLA:

Pecqueur, Sebastien, et al. "Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications." Angewandte Chemie International Edition 55.35 (2016): 10493-10497.

BibTeX: Download