Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Benyoucef M, Al-Zoubi T, Reithmaier JP, Wu M, Trampert A
Zeitschrift: physica status solidi (a)
Verlag: Wiley-VCH Verlag
Jahr der Veröffentlichung: 2014
Band: 211
Heftnummer: 4
Seitenbereich: 817-822
ISSN: 1862-6300
eISSN: 0031-8965


Abstract


InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect-free silicon matrix after a multi-step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high-resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect-free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III-V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect-free silicon. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.







FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Wu, Mingjian Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


Zusätzliche Organisationseinheit(en)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.
Universität Kassel


Zitierweisen

APA:
Benyoucef, M., Al-Zoubi, T., Reithmaier, J.P., Wu, M., & Trampert, A. (2014). Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon. physica status solidi (a), 211(4), 817-822. https://dx.doi.org/10.1002/pssa.201330395

MLA:
Benyoucef, Mohamed, et al. "Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon." physica status solidi (a) 211.4 (2014): 817-822.

BibTeX: 

Zuletzt aktualisiert 2019-20-08 um 09:17