Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon

Benyoucef M, Al-Zoubi T, Reithmaier JP, Wu M, Trampert A (2014)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2014

Journal

Publisher: Wiley-VCH Verlag

Book Volume: 211

Pages Range: 817-822

Journal Issue: 4

DOI: 10.1002/pssa.201330395

Abstract

InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect-free silicon matrix after a multi-step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high-resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect-free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III-V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect-free silicon. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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How to cite

APA:

Benyoucef, M., Al-Zoubi, T., Reithmaier, J.P., Wu, M., & Trampert, A. (2014). Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon. physica status solidi (a), 211(4), 817-822. https://dx.doi.org/10.1002/pssa.201330395

MLA:

Benyoucef, Mohamed, et al. "Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon." physica status solidi (a) 211.4 (2014): 817-822.

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