InPBi single crystals grown by molecular beam epitaxy

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Wang K, Gu Y, Zhou HF, Zhang L, Kang CZ, Wu M, Pan W, Lu PF, Gong Q, Wang S
Zeitschrift: Scientific Reports
Verlag: Nature Publishing Groups
Jahr der Veröffentlichung: 2014
Band: 4
ISSN: 2045-2322


Abstract


InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.





FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Wu, Mingjian Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


Zusätzliche Organisationseinheit(en)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Beijing University of Posts and Telecommunications (BUPT) / 北京邮电大学
Chinese Academy of Sciences (CAS) / 中国科学院
Qufu Normal University / 曲阜师范大学


Zitierweisen

APA:
Wang, K., Gu, Y., Zhou, H.F., Zhang, L., Kang, C.Z., Wu, M.,... Wang, S. (2014). InPBi single crystals grown by molecular beam epitaxy. Scientific Reports, 4. https://dx.doi.org/10.1038/srep05449

MLA:
Wang, Kai, et al. "InPBi single crystals grown by molecular beam epitaxy." Scientific Reports 4 (2014).

BibTeX: 

Zuletzt aktualisiert 2019-29-05 um 15:53