A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in 0.35um SiGe Technology

Nasr I, Knapp H, Aufinger K, Weigel R, Kissinger D (2014)

Publication Type: Journal article

Publication year: 2014

Journal

IEEE Transactions on Microwave Theory and Techniques Institute of Electrical and Electronics Engineers (IEEE)

Publisher: IEEE

Book Volume: 62

Pages Range: 2118-2131

Journal Issue: 9

DOI: 10.1109/TMTT.2014.2337289

Abstract

This work presents a highly integrated transmitter (TX) and receiver (RX) chipset operating from 50 to 100 GHz. The local oscillator (LO) is realized using a high output power millimeter-wave integrated frequency synthesizer with an octave output frequency range. The proposed low-complexity discrete tuned synthesizer architecture employs a single wide-tuning range voltage-controlled oscillator core and a single-sideband mixer, which can be switched to operate as a LO amplifier. An ultra broadband variable gain amplifier, with a gain control range $>{hbox {25 dB}}$, is used at the output of the synthesizer to provide a tunable output power. A maximum output power from $+{hbox{7}}$ to $+{hbox{12 dBm}}$ and an output phase noise from $-{hbox{83}}$ to $-{hbox{96 dBc/Hz}}$ at 1-MHz offset are measured over the complete output frequency range. Moreover, a spurious suppression $>{hbox {22 dB}}$ is achieved over the entire synthesizer's tuning range. The RX shows a conversion gain $>{hbox {19 dB}}$ and a noise figure $< {hbox {9.5 dB}}$ from 50 to 100 GHz. The TX's measured saturated output power is from $ +{hbox{6}}$ to $-{hbox{1 dBm}}$ over the entire frequency range. The complete chipset is realized in a commercial low-cost SiGe:C technology with an $f- {t}/f_{max}$ of ${hbox{170/250 GHz}}$. Each of the TX and RX chips including the frequency synthesizers draw a current of 370 mA from a 3.3-V supply.

Authors with CRIS profile

Ismail Nasr Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Dietmar Kissinger Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Nasr, I., Knapp, H., Aufinger, K., Weigel, R., & Kissinger, D. (2014). A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in 0.35um SiGe Technology. IEEE Transactions on Microwave Theory and Techniques, 62(9), 2118-2131. https://doi.org/10.1109/TMTT.2014.2337289

MLA:

Nasr, Ismail, et al. "A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in 0.35um SiGe Technology." IEEE Transactions on Microwave Theory and Techniques 62.9 (2014): 2118-2131.

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