Zohny A, Leuschner S, Rascher J, Pinarello S, Ußmüller T, Müller JE, Fischer G, Weigel R (2013)
Publication Type: Conference contribution
Publication year: 2013
Publisher: IEEE
Pages Range: 165-168
Event location: Nürnberg
Simultaneously achieving high linearity and high power-added efficiency (PAE) is essential for power amplifiers (PA) operating with modern communication signals. The challenge is exacerbated by the low breakdown voltages of standard CMOS realizations. This work presents a low-complexity programmable analog scheme to compensate the strong AM-AM and AM-PM nonlinearities of the high-ruggedness stacked-cascode topology while maintaining high PAE. The proposed solution utilizes standard NMOS devices to achieve peak PAE of 60\% at the 900 MHz band from a 3V supply. The compensation scheme manages to improve the output 1-dB compression point by up to 2 dB and keep the AM-PM variation within 5 degrees. The proposed method improves the linear output power (@ ACPR= -40 dBc) for a Class-AB power amplifier by up to 1.5 dB without compromising PAE or saturated output power
APA:
Zohny, A., Leuschner, S., Rascher, J., Pinarello, S., Ußmüller, T., Müller, J.-E.,... Weigel, R. (2013). Analog Compensation of AM-AM and AM-PM effects for HighEfficiency Stacked-FET Power Amplifiers in 65-nm Standard CMOS. In Proceedings of the European Microwave Integrated Circuits Conference (EuMIC) (pp. 165-168). Nürnberg: IEEE.
MLA:
Zohny, Amr, et al. "Analog Compensation of AM-AM and AM-PM effects for HighEfficiency Stacked-FET Power Amplifiers in 65-nm Standard CMOS." Proceedings of the European Microwave Integrated Circuits Conference (EuMIC), Nürnberg IEEE, 2013. 165-168.
BibTeX: Download