A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology

Lämmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D (2013)

Publication Type: Journal article

Publication year: 2013

Journal

IEEE Transactions on Microwave Theory and Techniques Institute of Electrical and Electronics Engineers (IEEE)

Publisher: IEEE

Book Volume: 61

Pages Range: 2195-2204

Journal Issue: 5

DOI: 10.1109/TMTT.2013.2253792

Authors with CRIS profile

Benjamin Lämmle Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Dietmar Kissinger Lehrstuhl für Technische Elektronik

How to cite

APA:

Lämmle, B., Schmalz, K., Scheytt, C., Weigel, R., & Kissinger, D. (2013). A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology. IEEE Transactions on Microwave Theory and Techniques, 61(5), 2195-2204. https://dx.doi.org/10.1109/TMTT.2013.2253792

MLA:

Lämmle, Benjamin, et al. "A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology." IEEE Transactions on Microwave Theory and Techniques 61.5 (2013): 2195-2204.

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