Interface Engineering in High-Performance Low-Voltage Organic Thin-Film Transistors Based on 2,7-Dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes

Amin AY, Reuter K, Meyer-Friedrichsen T, Halik M (2011)


Publication Language: English

Publication Type: Journal article, Report

Publication year: 2011

Journal

Book Volume: 27

Pages Range: 15340-15344

Journal Issue: 24

URI: http://pubs.acs.org/doi/full/10.1021/la203041x?prevSearch=%255BAllField%253A%2B%255BAllField%253A%2Bhalik%255D%255D&searchHistoryKey=

DOI: 10.1021/la203041x

Abstract

We investigated two different (2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes; Cn–BTBT–Cn, where n = 12 or 13) semiconductors in low-voltage operating thin-film transistors. By choosing functional molecules in nanoscaled hybrid dielectric layers, we were able to tune the surface energy and improve device characteristics, such as leakage current and hysteresis. The dipolar nature of the self-assembled molecules led to a shift in the threshold voltage. All devices exhibited high charge carrier mobilities of 0.6–7.0 cm2 V–1 s–1. The thin-film morphology of BTBT was studied by means of atomic force microscopy (AFM), presented a dependency upon the surface energy of the self-assembled monolayer (SAM) hybrid dielectrics but not upon the device performance. The use of C13–BTBT–C13 on hybrid dielectrics of AlOx and a F15C18–phosphonic acid monolayer led to devices with a hole mobility of 1.9 cm2 V–1 s–1 at 3 V, on/off ratio of 105, small device–device variation of mobility, and a threshold voltage of only −0.9 V, thus providing excellent characteristics for further integration.

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How to cite

APA:

Amin, A.Y., Reuter, K., Meyer-Friedrichsen, T., & Halik, M. (2011). Interface Engineering in High-Performance Low-Voltage Organic Thin-Film Transistors Based on 2,7-Dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes. Langmuir, 27(24), 15340-15344. https://dx.doi.org/10.1021/la203041x

MLA:

Amin, Atefeh Y., et al. "Interface Engineering in High-Performance Low-Voltage Organic Thin-Film Transistors Based on 2,7-Dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes." Langmuir 27.24 (2011): 15340-15344.

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