Novak M, Burkhardt M, Jedaa A, Halik M (2010)
Publication Language: English
Publication Type: Journal article, Report
Publication year: 2010
Book Volume: 518
Pages Range: 2222-2227
Journal Issue: 8
URI: http://www.sciencedirect.com/science/article/pii/S0040609009012796
DOI: 10.1016/j.tsf.2009.07.144
Non-volatile memory devices based on the charge transfer complex copper-7,7,8,8 tetracyanochinodimethane were fabricated on ridged and flexible substrates with special emphasis on their general functionality and cross talk behaviour in 4 × 4 passive matrix arrays. Device characteristics have been investigated at elevated temperatures during operation (ranging from room temperature to 120 °C) under ambient conditions without encapsulation. To explore the influence of mechanical stress on device performance, the memory cells on flexible polyethylene terephthalate substrates were bended during operation, up to a convex and concave radius of 4 mm. The detected shift of the switching voltages and the decrease of reliability can be attributed to stress induced cracks in the active layer.
APA:
Novak, M., Burkhardt, M., Jedaa, A., & Halik, M. (2010). Flexible Copper-7,7,8,8 Tetracyanochinodimethane Memory Devices - Operation, Cross Talk and Bending. Thin Solid Films, 518(8), 2222-2227. https://doi.org/10.1016/j.tsf.2009.07.144
MLA:
Novak, Michael, et al. "Flexible Copper-7,7,8,8 Tetracyanochinodimethane Memory Devices - Operation, Cross Talk and Bending." Thin Solid Films 518.8 (2010): 2222-2227.
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