Fabrication of genuine single-quantum-dot light-emitting diodes
Schmidt R, Scholz U, Vitzthum M, Fix R, Metzner C, Kailuweit P, Reuter D, Wieck A, Hübner M, Stufler S, Zrenner A, Malzer S, Döhler G (2006)
Publication Type: Journal article, Original article
Publication year: 2006
Journal
Original Authors: Schmidt R., Scholz U., Vitzethum M., Fix R., Metzner C., Kailuweit P., Reuter D., Wieck A., Hubner M.C., Stufler S., Zrenner A., Malzer S., Dohler G.H.
Publisher: American Institute of Physics (AIP)
Book Volume: 88
Article Number: 121115
Journal Issue: 12
DOI: 10.1063/1.2188057
Abstract
We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub- μ m range. In devices with sufficiently low dot densities, only one single dot is expected to be electrically addressed. Both the observed current versus voltage characteristics and the evolution of the electroluminescence spectra as a function of applied voltage clearly demonstrate that this goal has been achieved. © 2006 American Institute of Physics.
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Germany (DE)How to cite
APA:
Schmidt, R., Scholz, U., Vitzthum, M., Fix, R., Metzner, C., Kailuweit, P.,... Döhler, G. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters, 88(12). https://doi.org/10.1063/1.2188057
MLA:
Schmidt, Ralf, et al. "Fabrication of genuine single-quantum-dot light-emitting diodes." Applied Physics Letters 88.12 (2006).
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