Oxygen diffusivity in silicon derived from dynamical X-ray diffraction

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autor(en): Will J, Gröschel A, Kot D, Bergmann C, Steinrück HG, Schubert MA, Kissinger G, Magerl A
Zeitschrift: Journal of Applied Physics
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 2013
Band: 113
Heftnummer: 7
ISSN: 0021-8979


Abstract


Thickness dependent Pendellösung oscillations are highly sensitive to strain fields from defects in a host crystal. Based on this, we present a novel technique to measure the precipitation kinetics of oxygen in silicon already at its early stage of clustering at high temperatures. At 900 °C, precipitates with a radius smaller than 4 nm and with a density of 1 ± 0.5 × 10 1/cm were observed. The technique was calibrated by complementary scanning transmission electron microscope and energy dispersive X-ray measurements in the range of normal diffusivity yielding a diffusion constant of 1.7 ± 0.1 × 10 - 12 cm / s, which is close to the literature value of 2.074 × 10 - 12 cm / s. The measurements have been made with the characteristic K-line of a high voltage tungsten X-ray tube at 59.31 keV, which provides the opportunity to illuminate through complex sample environments like high temperature scattering furnaces. © 2013 American Institute of Physics.



FAU-Autoren / FAU-Herausgeber

Bergmann, Christoph
Lehrstuhl für Kristallographie und Strukturphysik
Gröschel, Alexander
Lehrstuhl für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Steinrück, Hans-Georg
Lehrstuhl für Kristallographie und Strukturphysik
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


Zitierweisen

APA:
Will, J., Gröschel, A., Kot, D., Bergmann, C., Steinrück, H.-G., Schubert, M.A.,... Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 113(7). https://dx.doi.org/10.1063/1.4792747

MLA:
Will, Johannes, et al. "Oxygen diffusivity in silicon derived from dynamical X-ray diffraction." Journal of Applied Physics 113.7 (2013).

BibTeX: 

Zuletzt aktualisiert 2019-08-04 um 21:50