Will J, Gröschel A, Kot D, Bergmann C, Steinrück HG, Schubert MA, Kissinger G, Magerl A (2013)
Publication Type: Journal article, Original article
Publication year: 2013
Original Authors: Will J., Groschel A., Kot D., Schubert M.A., Bergmann C., Steinruck H.-G., Kissinger G., Magerl A.
Publisher: American Institute of Physics (AIP)
Book Volume: 113
Article Number: 073508
Journal Issue: 7
DOI: 10.1063/1.4792747
Thickness dependent Pendellösung oscillations are highly sensitive to strain fields from defects in a host crystal. Based on this, we present a novel technique to measure the precipitation kinetics of oxygen in silicon already at its early stage of clustering at high temperatures. At 900 °C, precipitates with a radius smaller than 4 nm and with a density of 1 ± 0.5 × 10 1/cm were observed. The technique was calibrated by complementary scanning transmission electron microscope and energy dispersive X-ray measurements in the range of normal diffusivity yielding a diffusion constant of 1.7 ± 0.1 × 10 - 12 cm / s, which is close to the literature value of 2.074 × 10 - 12 cm / s. The measurements have been made with the characteristic K-line of a high voltage tungsten X-ray tube at 59.31 keV, which provides the opportunity to illuminate through complex sample environments like high temperature scattering furnaces. © 2013 American Institute of Physics.
APA:
Will, J., Gröschel, A., Kot, D., Bergmann, C., Steinrück, H.-G., Schubert, M.A.,... Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 113(7). https://dx.doi.org/10.1063/1.4792747
MLA:
Will, Johannes, et al. "Oxygen diffusivity in silicon derived from dynamical X-ray diffraction." Journal of Applied Physics 113.7 (2013).
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