Silicon nitride as top gate dielectric for epitaxial graphene

Beitrag in einem Sammelwerk
(Originalarbeit)


Details zur Publikation

Autor(en): Wehrfritz P, Fromm F, Malzer S, Seyller T
Herausgeber: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein
Titel Sammelwerk: Silicon Carbide and Related Materials 2012
Verlag: Trans Tech Publications
Jahr der Veröffentlichung: 2013
Titel der Reihe: Materials Science Forum
Seitenbereich: 149-152
ISSN: 0255-5476
eISSN: 1662-9752


Abstract


Silicon nitride (SiN) was deposited by plasma enhanced chemical vapor deposition (PECVD) as a top gate dielectric on epitaxial graphene on 6H-SiC(0001). We compare x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transport measurements which were performed before and after the SiN deposition. We demonstrate that closed layers of SiN are formed without the need for surface activation and that the plasma process leads only to a minor degradation of the graphene. The SiN layer induces strong n-type doping. For a limited gate voltage range, a small hysteresis of 0.2 V is observed in top-gated field effect devices. © (2013) Trans Tech Publications, Switzerland.



FAU-Autoren / FAU-Herausgeber

Fromm, Felix
Lehrstuhl für Laserphysik
Malzer, Stefan Dr.
Institut für Physik der Kondensierten Materie
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik
Wehrfritz, Peter
Lehrstuhl für Laserphysik


Zitierweisen

APA:
Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2013). Silicon nitride as top gate dielectric for epitaxial graphene. In Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Eds.), Silicon Carbide and Related Materials 2012 (pp. 149-152). Trans Tech Publications.

MLA:
Wehrfritz, Peter, et al. "Silicon nitride as top gate dielectric for epitaxial graphene." Silicon Carbide and Related Materials 2012 Ed. Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications, 2013. 149-152.

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Zuletzt aktualisiert 2018-11-08 um 01:26