Silicon nitride as top gate dielectric for epitaxial graphene

Wehrfritz P, Fromm F, Malzer S, Seyller T (2013)


Publication Type: Book chapter / Article in edited volumes

Publication year: 2013

Journal

Original Authors: Wehrfritz P., Fromm F., Malzer S., Seyller T.

Publisher: Trans Tech Publications

Edited Volumes: Silicon Carbide and Related Materials 2012

Series: Materials Science Forum

Pages Range: 149-152

Event location: St. Petersburg

DOI: 10.4028/www.scientific.net/MSF.740-742.149

Abstract

Silicon nitride (SiN) was deposited by plasma enhanced chemical vapor deposition (PECVD) as a top gate dielectric on epitaxial graphene on 6H-SiC(0001). We compare x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transport measurements which were performed before and after the SiN deposition. We demonstrate that closed layers of SiN are formed without the need for surface activation and that the plasma process leads only to a minor degradation of the graphene. The SiN layer induces strong n-type doping. For a limited gate voltage range, a small hysteresis of 0.2 V is observed in top-gated field effect devices. © (2013) Trans Tech Publications, Switzerland.

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How to cite

APA:

Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2013). Silicon nitride as top gate dielectric for epitaxial graphene. In Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Eds.), Silicon Carbide and Related Materials 2012. (pp. 149-152). Trans Tech Publications.

MLA:

Wehrfritz, Peter, et al. "Silicon nitride as top gate dielectric for epitaxial graphene." Silicon Carbide and Related Materials 2012. Ed. Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications, 2013. 149-152.

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